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发明名称
Nickel alloy salicide process, Methods of fabricating a semiconductor device using the same, nickel alloy silicide layer formed thereby and semiconductor devices fabricated using the same
摘要
申请公布号
KR100870176(B1)
申请公布日期
2008.11.25
申请号
KR20030042838
申请日期
2003.06.27
申请人
发明人
分类号
H01L21/24;H01L21/28;H01L21/20;H01L21/285;H01L21/3205;H01L21/336;H01L23/52;H01L29/40;H01L29/423;H01L29/49;H01L29/78
主分类号
H01L21/24
代理机构
代理人
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