Non-volatile memory devices and systems including phase-change one-time-programmable (OTP) memory cells and related methods

摘要

In one aspect, a non-volatile memory includes a phase-change memory cell array which includes a plurality of normal phase-change memory cells and a plurality of pseudo one-time-programmable (OTP) phase-change memory cells, a write driver which writes data into the normal and pseudo OTP phase-change memory cells of the phase-change memory cell array, and an OTP controller which selectively disables the write driver.