发明名称 |
Quantum dot optoelectronic device having an Sb-containing overgrown layer |
摘要 |
A quantum dot optoelectronic device has an overgrown layer containing antimony (Sb). The optical characteristics and thermal stability of the optoelectronic device are thus greatly enhanced due to the improved crystal quality and carrier confinement of the quantum dot structure.
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申请公布号 |
US7456423(B2) |
申请公布日期 |
2008.11.25 |
申请号 |
US20060500935 |
申请日期 |
2006.08.09 |
申请人 |
NATIONAL CENTRAL UNIVERSITY |
发明人 |
LIU WEI-SHENG;CHYI JEN-INN |
分类号 |
H01L29/06;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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