发明名称 Semiconducotr devices having a metal-insulator-metal capacitor and methods of fabricating the same
摘要 Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.
申请公布号 KR100870178(B1) 申请公布日期 2008.11.25
申请号 KR20050073498 申请日期 2005.08.10
申请人 发明人
分类号 H01L27/108 主分类号 H01L27/108
代理机构 代理人
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