| 摘要 |
A field effect transistor according to an embodiment of the invention includes: a semiconductor substrate; a channel layer of a first conductivity type formed on the semiconductor substrate; and a semiconductor layer of a second conductivity type that is buried in a recess structure formed in a semiconductor layer on the channel layer and connected with a gate electrode, in which the recess structure is formed using a recess stopper layer containing In, a semiconductor layer that contacts the bottom of the semiconductor layer of the second conductivity type does not contain In, and the uppermost semiconductor layer among semiconductor layers that contact a side surface of the semiconductor layer of the second conductivity type does not contain In.
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