| 摘要 |
A semiconductor device includes a first device region including a plurality of source regions and a plurality of drain regions of first conductivity type transistors, a plurality of loop-shaped gate electrode regions of the first conductivity type transistors, a second device region including a plurality of source regions and a plurality of drain regions of a second conductivity type transistors, a plurality of loop-shaped gate electrode regions of the second conductivity type transistors, a first wiring configured to supply a first voltage to at least one of the source regions of the first device region, a second wiring configured to supply a second voltage to at least one of the source regions of the second device region, and a third wiring electrically coupled to the drain regions of the first and second device regions and to the gate electrode regions of the first and the second conductivity type transistors.
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