发明名称 GAS MONITORING APPARATUS USED IN SEMICONDUCTOR MANUFACTURING PROGRESS
摘要 A gas monitoring apparatus used in a semiconductor manufacturing progress is provided to reduce the size of the apparatus by cooling the monitoring chamber without the separate chiller. The plasma generating device(120) comprises the monitoring chamber(110) where the view port is installed at one side; the microwave generating unit(120a) having the antenna generating the microwave; the plasma generation part(120b) producing the plasma through the energy generated from the microwave generating unit in the monitoring chamber. A gas monitoring device comprises the spectrometer producing the electric signal about the optical spectrum by receiving the light irradiated from the vie port; the controller analyzing the data about the spectrums obtained from the spectrometer.
申请公布号 KR20080101968(A) 申请公布日期 2008.11.24
申请号 KR20070048173 申请日期 2007.05.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, YOUNG DONG;CHO, HYUNG CHUL;PARK, JONG ROK;SEOK, SEOUNG HYUN;USHAKOV ANDREY
分类号 H01L21/02;H01L21/205 主分类号 H01L21/02
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