METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL INGOT

摘要

The [Oi] deviation according to the radius direction position in a wafer can be reduced by controlling ORG in the silicon single crystalline ingot growth by CUSP magnetic field application method for applying a low S / R speed. The method of manufacturing the silicon epitaxial ingot is provided. When raising the silicon epitaxial ingot within the quartz crucible from the silicon solution by using the seed crystal. CUSP magnetic field is applied to the melted silicon in a quartz crucible(20) under the inert gas atmosphere. The rotation(S/R) speed of the seed crystal is smaller than 13 rpm. The forced convection by the CUSP magnetic field application is maximized and the free convection by the temperature gradient of the silicon solution is minimized.