| 摘要 |
The method involves coating a first electrode with a solid-state electrolyte layer under purposeful defect formation in partial crystalline solid-state electrolyte matrix, and then forming a second electrode on the solid-state electrolyte layer. Particle or ion irradiation is performed for the purposeful defect formation in the solid-state electrolyte matrix. An independent claim is included for the solid-state electrolyte memory. |
