| 摘要 |
An active matrix TFT array substrate includes a gate electrode and a gate line formed from a first metal film over a transparent insulating substrate, a gate insulating film to cover the gate electrode and gate line, a semiconductor layer formed over the gate insulating film, a source electrode and a drain electrode formed over the semiconductor layer and a pixel electrode formed from a transparent conductive film. Either of the source or the drain electrode is formed from the transparent conductive film and the active matrix TFT array substrate further comprises a second metal film thereover mainly including one of Al, Cu and Ag. |
