FLASH MEMORY DEVICE AND MANUFACTURING METHOD AND OPERATING METHOD THEREOF

摘要

A flash memory device and a manufacturing method thereof and an operation method are provided to enhance the reliability by separating the domain in which the electric charge is injected from the domain determining the threshold voltage. The memory device includes the channel region(11a) dividing the domain in which the electric charge is injected and the domain(B) determining the threshold voltage; the gate structure(20) formed on the channel region. The channel region is formed in order to have bending on both sides of top part. The channel region is used for the domain(A) in which the electric charge is injected in the program or elimination.