| 摘要 |
<p>The nitrogen gas(N2) is injected into the flash cell surface after forming the flash cell in order to bond the nitrogen gas(N2) with flash cell unite. The plasma damage can be solved by hardening the flash cell after the bonding. The semiconductor device fabricating method is provided. A step is for forming the memory cell including the laminated insulating film and silicon film. A step is for injecting the nitrogen gas(N2) in the surface of the memory cell for bonding the laminated insulating film with silicon film. A step is for hardening the memory cell after the gas injection. The flash memory cell comprises the laminated insulating film of the ONO layer and the silicon film formed with the poly on the top of the laminated insulating film.</p> |
