| 摘要 |
An insulating layer having rough surface is formed by performing the HDP to lower the rate of sputter etch to evaporation of the hole side. Therefore, the surface area of the storage node formed along the surface of the insulating layer can be increased. The method for forming a capacitor of a semiconductor device is provided. A step is for forming the mold layer on the semiconductor substrate(100) in which the storage node contact plug is formed. A step is for forming the hole which exposes the storage node contact plug(105) by etching the mold layer. A step is for forming the insulating layer having rough surface on the side of the hole. A step is for forming the conductive film for the storage node on the hole surface including the insulating layer. A step is for forming the storage node in the hole(H) surface by removing the conductive film for the storage node formed in upper part the mold layer and the insulating layer.
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