发明名称 |
A METHOD OF MANUFACTURING FOR METAL LINE PATTERN |
摘要 |
The uniformity of the metal line pattern is improved by reducing the density difference of the metal line pattern and by preventing dishing by the chemical mechanical polishing process. The first metal line pattern(10) supplies the different power source to the block consisting of a plurality of cells. The second metal line pattern(20) is formed between the first metal line pattern and delivers signals between cells. The dummy metal line pattern is formed between the second metal line patterns and is divided into at least two in the longitudinal direction of the second metal line pattern.
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申请公布号 |
KR20080100947(A) |
申请公布日期 |
2008.11.21 |
申请号 |
KR20070047021 |
申请日期 |
2007.05.15 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, HO RYONG;RYU, NAM GYU;CHOI, WON JOHN |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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