| 摘要 |
An apparatus for generating plasma is provided to adjust the RF power transfer rate by selectively forming the electric field and the magnetic field within the chamber. The plasma generating device includes the vacuum chamber in which the top is shut tightly by the vacuum plate(31) having a plurality of gas injection nozzles; the electrostatic chuck on which substrate is placed; the connected gas injector(36c) formed at the outer circumference connected to the gas injection nozzle; the antenna unit receiving the external source RF. The inside of the vacuum chamber is vacant. The electrostatic chuck receives the external bias RF and is arranged in the central part of the vacuum chamber.
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