| 摘要 |
A page buffer and page buffer test mode of flash memory is provided to prevent an effect on the verification of situation of the memory cell array by making the page buffer of the repaired memory cell a programming state in the programming. In the repair of the memory cell, a signal generator(10) generates a programming signal for setting the state of the memory cell programming in response to the redundancy signal(RED) enabled in the repair of the memory cell. A logic unit performs an OR-operation by receiving a redundancy signal and data signal. The memory cell is repaired to the redundancy, programming of the page buffer of the repaired memory cell, and then programming of the memory cell not repaired is performed. |
