| 摘要 |
A method for forming trench gap fill in semiconductor device is provided to improve the working speed of the semiconductor device by increasing the aspect ratio of trench void. A method for forming trench gap fill in semiconductor device includes the step of forming the first oxide film(102) and the hard mask on the semiconductor substrate(100); the step of forming the trench(110) by etching the semiconductor substrate; the step of performing the round etching to the inside of the trench; the step of forming the second oxide film(120) inside the trench in which the round etching is performed; the step of connecting the first oxide film; the step of removing the hard mask and gap-filling the trench by depositing the polysilicon layer(130).
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