| 摘要 |
An organo metallic precursor compound for depositing a metallic thin film or a ceramic thin film existing in a room temperature is provided to be stable thermally, to heighten volatility, to have a high thermal stability and a high vapor pressure though temperature is increased continuously and to be usefully applied to a process of manufacturing semiconductor depositing a metallic cobalt using a metal-organic chemical vapor deposition and a method for depositing an atomic layer, the metallic thin film containing a cobalt including a cobalt silicide and a cobalt oxide and the ceramic thin film containing the cobalt including the cobalt nitride. An organo metallic precursor compound for depositing a metallic thin film or a ceramic thin film containing a cobalt is used to deposit the metallic thin film in which the cobalt is contained and the ceramic thin film in which the cobalt is contained, and is expressed by a chemical formula 1. In the chemical formula 1: R1, R2, R3 and R4 are selected from the alkyl of hydrogen or carbon number 1-4, trialkylsilylalkyl expressed as (CH2)nSiR6R7R8, alkoxyalkyl indicated as -(CH2)nOR6, dialkylaminoalkyl expressed as -(CH2)nNR6R7, trialkylsilyl expressed as -SiR6R7R8, alkoxy indicated as -OR6 and dialkylamino expressed as -NR6R7; R5 is selected from alkyl of carbon number 1-4, trialkylsilylalkyl expressed as (CH2)nSiR6R7R8, alkoxyalkyl indicated as -(CH2)nOR6, dialkylaminoalkyl expressed as -(CH2)nNR6R7, trialkylsilyl expressed as -SiR6R7R8, the alkoxy indicated as -OR6 and the dialkylamino expressed as -NR6R7, wherein n is the integer value of 1 - 3; and R6 - R8 is an alkyl group of carbon number 1-4.
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