发明名称 PLASMA PROCESSING APPARATUS
摘要 The plasma processing apparatus is provided to improve the lifetime of equipment and reduce the maintenance cost by not directly exposing the lower-part of the insulation part to the plasma or the process gas. The plasma processing apparatus includes the bottom electrode part(10) which is equipped on the lower part of the chamber and on which the substrate(S) is settled; the insulation part(30) circling around the edge of both sides or the upper side of the bottom electrode part; the ceramic plate(20) circling around the insulation part; the cover member(40) protecting the lower part of the insulation part from the plasma and process gas.
申请公布号 KR20080101452(A) 申请公布日期 2008.11.21
申请号 KR20070048592 申请日期 2007.05.18
申请人 ADP ENGINEERING CO., LTD. 发明人 JEONG, WON KI;LEE, CHANG KEUN
分类号 H01L21/02;H01L21/205;H01L21/3065 主分类号 H01L21/02
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