SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The semiconductor substrate, the semiconductor device and the manufacturing method thereof are provided to form the semiconductor layer including the second halogen on the bearing substrate by separating the part of the semiconductor substrate. The method for manufacturing the semiconductor substrate includes the step of performing the first thermal processing in order to form the oxide film(103) including the first halogen on the surface of the single crystalline semiconductor substrate(102); the step of irradiating the second halogen ion onto the oxide film including first halogen; the step of forming the junction layer on the oxide film including the first halogen; the step of welding the support substrate with the single crystalline semiconductor substrate; the step of forming the single crystal semiconductor film including the second halogen on the support substrate.