发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 A semiconductor device and a method for manufacturing the same are provided to reduce the thermal gradient in the pixel of the solid imaging device by suppressing the thermal conductivity to the first electronic circuit from the second electronic circuit. A semiconductor device comprises the semiconductor substrate(10) on which the first electronic circuit and the second electronic circuit are formed; the pad electrode(13) connected to the second electronic circuit and/or the first electronic circuit on the active side surface; the first opening formed to the pad electrode from the opposite side of the active side surface of the semiconductor board; the second opening formed on the bottom surface of the first opening to reached the pad electrode; the insulating layer(20) formed by coating the sidewall of the second opening and the first opening; the conductive layer(21) formed by coating the inner wall surface of the insulating layer and the bottom surface of the second opening; the adiabatic section reclaimed in the third opening.
申请公布号 KR20080101662(A) 申请公布日期 2008.11.21
申请号 KR20080034046 申请日期 2008.04.14
申请人 SONY CORPORATION 发明人 NABE YOSHIHIRO;HATANO MASAKI;ASAMI HIROSHI;MORIMOTO AKIHIRO
分类号 H01L23/32;H01L23/28;H01L23/34 主分类号 H01L23/32
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