| 摘要 |
<p>The gate spacer having the excessively nitrided region in the gate sidewall is formed. The gate spacer plays a role of suppressing the formation of the parasitic silicide film in the formation of silicide film. The process time is shortened by omitting the cleaning process performed between the first and second thermal processes. The method of manufacturing the transistor including a silicide film is provided. The polysilicon pattern(108) is formed on the semiconductor substrate(100). The gate spacer(120S) having the excessively nitrided region(120N) is formed on the side wall of the polysilicon pattern. The source/drain region(140) frame is formed on the semiconductor substrate adjacent to both sides of polysilicon pattern. The silicide film(160a, 160b) is formed on the polysilicon pattern and source/drain region.</p> |
