| 摘要 |
A domain wall movement memory device and a formation method of the memory device are provided to implement large storage capacity by magnetic domains, external shock resistance enhancement by a recording electrode structure, and high speed operation by a yoke pattern. A domain wall movement memory device includes a data storage pattern(240) having a plurality of magnetic domains, wirings connected to both ends of the data storage pattern, one or more yoke patterns(210,250) positioned on one side of the data storage pattern, a reproducing electrode structure facing one or more magnetic domains, a recording electrode structure facing one or more magnetic domains, and a current application circuit which is connected to the wirings and generates the current flowing in the data storage pattern.
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