发明名称 METHOD FOR FABRICATING IN PHASE SHIFT MASK
摘要 <p>The resist forming process, the exposure process and photolithography process for the CD calibration procedure CD can be omitted by performing the imprint process using the mold as the resist pattern exposing the region for CD calibration procedure. The method of manufacturing the phase shifting mask is provided. A step is for forming the phase shift layer pattern(110) and light block film pattern(120) on the transparent substrate(100) having the main pattern region and edge region. A step is for imprinting the resist(210) pattern which exposes the main pattern region on the transparent substrate. A step is for correcting the line width of the phase shift layer pattern of the edge region by using the etching mask the resist pattern. The phase shift layer pattern and light block film pattern have the line width which is greater than the desired line width.</p>
申请公布号 KR20080101091(A) 申请公布日期 2008.11.21
申请号 KR20070047325 申请日期 2007.05.15
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHUN, JUN
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
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