MANUFACTURING METHOD OF SOI SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A manufacturing method of SOI substrate and a manufacturing method of semiconductor device are provided to improve the value of the semiconductor device by thinning the semiconductor layer after irradiating the laser beam. The manufacturing method of the SOI substrate includes the step of forming the ion implantation layer(113) within the semiconductor substrate by injecting the ion beam into the semiconductor substrate(111); the step of forming the ion implantation layer within the semiconductor substrate; the step of forming the junction layer(114) on the semiconductor substrate; the step of welding to the base substrate(101) with the semiconductor substrate; the step of leaving the semiconductor layer on the base substrate by heating up the semiconductor substrate and the base substrate; the step of irradiating the laser light onto the semiconductor layer; the step of thinning the semiconductor layer by etching the semiconductor layer.