| 摘要 |
A method for fabricating a semiconductor device is provided to reduce the residue generation in the step region of the overlay mark by not forming the overlay mark with the overlay vernier. The manufacturing method of the semiconductor device is able to suppress the residue generation at the overlay mark step region. According to the fabrication of the semiconductor device of the laminating structure, the overlay mark(40) for distinguishing the overlay vernier formed in the upper layer at the next process is formed on the sub-layer through the previous process. The overlay mark is formed prier to the planarization process.
|
