| 摘要 |
A plasma immersion ion implantation is provided to prevent the defect from being generated on the wafer surface due to the metal contamination. A plasma immersion ion implantation includes the step of providing the gas distribution ring having a plurality of gas jet orifices(202) which radially faces outside the peripheral unit of the wafer support pedestal(108); the step of inflowing the silicon contained gas(for example, silane) through the gas jet orifice of the gas distribution ring; the step of providing each outside pipe which is generally expanded into the diameter of the chamber(100); the step of spraying the oxygen gas through the conduit port(114) to the chamber; the step of evaporating the layer which becomes to the SixOy material on the surface within the chamber; the step of positioning the wafer on pedestal; the step of inflowing the ion implantation precursor gas to chamber.
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