| 摘要 |
<p>A semiconductor device and a method for manufacturing of BOAC/COA are provided to resolve the problem that the damage is generated by implementing the BOAC/COA with the metal dual damascene process. The semiconductor device comprises the conductive pad formed in the front side of the semiconductor substrate; the passivation oxide film(405) formed on the conductive pad; the metal(413) which is formed in order to define as the domain in which the bond pad is formed in the conductive pad and passivation oxide film upper part; the partial barrier film formed at the side wall of the metal; the partial metal seed formed at the barrier film side wall.</p> |
