| 摘要 |
A metal wire forming method for preventing defect spreading is provided to improve yield rate by removing fatal defection caused by scratches occurring in a CMP(Chemical Mechanical Polish) process. A metal wire forming method for preventing defect spreading comprises the steps of: forming a via and a trench by depositing an inter insulation layer(12) on a semiconductor substrate(11) and by performing a photographing/etching process; depositing a copper film(14) at the vial and the trench; forming a cooper wire(15) by removing unnecessary cooper from the deposited cooper film through a CMP process; depositing a first inter insulation film and a second inter insulation film on a cooper wire in order; and removing the second inter insulation film formed on the first inter insulation film through an etching process.
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