发明名称 |
Method of writing/reading data into/from memory cell and page buffer using different codes for writing and reading operations |
摘要 |
Provided are a method of writing/reading data into/from a memory cell and a page buffer using different codes for the writing and reading operations. The method of writing/reading data into/from a memory cell that has a plurality of threshold voltage distributions includes a data writing operation and a data reading operation. In the data writing operation, data having a plurality of bits is written into the memory cell by using a plurality of writing codes corresponding to threshold voltage distributions. In the data reading operation, the data having a plurality of bits is read from the memory cell by using reading codes corresponding to the threshold voltage distributions from among the threshold voltage distributions. In the method of writing/reading data into/from a memory cell, a part of the writing codes is different from a corresponding part of the reading codes.
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申请公布号 |
US2008285352(A1) |
申请公布日期 |
2008.11.20 |
申请号 |
US20080010481 |
申请日期 |
2008.01.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO KYOUNG-LAE;PARK YOON-DONG;KONG JUN-JIN;LEE SEUNG-HOON;HYUN JAE-WOONG;BYUN SUNG-JAE;PARK JU-HEE;SONG SEUNG-HWAN |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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