发明名称 |
METHOD OF FABRICATION OF AI/GE BONDING IN A WAFER PACKAGING ENVIRONMENT AND A PRODUCT PRODUCED THEREFROM |
摘要 |
A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.
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申请公布号 |
US2008283990(A1) |
申请公布日期 |
2008.11.20 |
申请号 |
US20080184231 |
申请日期 |
2008.07.31 |
申请人 |
INVENSENSE INC. |
发明人 |
NASIRI STEVEN S.;FLANNERY, JR. ANTHONY FRANCIS |
分类号 |
H01L23/02;H01L21/50 |
主分类号 |
H01L23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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