| 摘要 |
It is an object to provide a method for manufacturing a semiconductor substrate in which contamination of a semiconductor layer due to an impurity is prevented and the bonding strength between a support substrate and the semiconductor layer can be increased. An oxide film containing first halogen is formed on a surface of a semiconductor substrate, and the semiconductor substrate is irradiated with ions of second halogen, whereby a separation layer is formed and the second halogen is contained in a semiconductor substrate. Then, heat treatment is performed in a state in which the semiconductor substrate and the support substrate are superposed with an insulating surface containing hydrogen interposed therebetween, whereby part of the semiconductor substrate is separated along the separation layer, so that a semiconductor layer containing the second halogen is provided over the support substrate.
|
