| 发明名称 |
METHOD FOR GROWING SEMICONDUCTOR LAYER, METHOD FOR PRODUCING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND ELECTRONIC DEVICE |
| 摘要 |
Disclosed herein is a method for growing a semiconductor layer which includes the step of growing a semiconductor layer of hexagonal crystal structure having the (11-22) or (10-13) plane direction on the (1-100) plane of a substrate of hexagonal crystal structure.
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| 申请公布号 |
US2008283846(A1) |
申请公布日期 |
2008.11.20 |
| 申请号 |
US20080121906 |
申请日期 |
2008.05.16 |
| 申请人 |
SONY CORPORATION |
发明人 |
OHMAE AKIRA;ARIMOCHI MASAYUKI;MITOMO JUGO;FUTAGAWA NORIYUKI;HINO TOMONORI |
| 分类号 |
C30B25/18;H01L33/32 |
主分类号 |
C30B25/18 |
| 代理机构 |
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代理人 |
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