SEMICONDUCTOR THIN FILM, SEMICONDUCTOR THIN FILM MANUFACTURING METHOD AND SEMICONDUCTOR ELEMENT

摘要

An amorphous oxide thin film containing an amorphous oxide is exposed to oxygen plasma generated by exciting an oxygen-containing gas by high frequency. The oxygen plasma is preferably generated under the conditions where applying frequency is 1kHz or more but not more than 300MHz and a pressure is 5Pa or more. Furthermore, the amorphous oxide thin film is preferably exposed by one method selected from among sputtering method, ion plating method, vacuum deposition method, sol-gel method and fine particle application method.