| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a target for physical film deposition reducing abnormal discharge upon sputtering, and to provide an oxide semiconductor film having PAN (Phosphoric acid-Acetic acid-Nitric acid) resistance. <P>SOLUTION: The oxide sintered compact comprises an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin (Sn) element, and comprises a compound expressed by Ga<SB>2</SB>In<SB>6</SB>Sn<SB>2</SB>O<SB>16</SB>or (Ga, In)<SB>2</SB>O<SB>3</SB>. <P>COPYRIGHT: (C)2009,JPO&INPIT |
