| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having high adherence, small ohmic resistance, and high light extraction efficiency. <P>SOLUTION: This semiconductor device comprises a lamination 20 having a contact layer 17 containing a II-VI group compound semiconductor (e.g. ZnTe, BeZnTe or MgSe), and an upper electrode 18 formed on the top face of the contact layer 17. A concavo-convex portion 17C is formed on the whole top face of the contact layer 17, and the concavo-convex portion 17C has a fine structure wherein a plurality of stripe-shaped convex portions 17D extending in one direction in the lamination surface are arranged in parallel. Thereby, not only the contact area between the contact layer 17 and the upper electrode 18 becomes larger as compared with the case wherein the top face of the contact layer 17 is a flat surface, but also the change of the refractive index in the normal direction in a region opposed to the light emitting region 14A (or an opening portion 18A) in the top face of the contact layer 17 becomes smooth. <P>COPYRIGHT: (C)2009,JPO&INPIT |
