| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element manufacturing method for manufacturing a semiconductor element including a hexagonal system 3-5 group nitride semiconductor with a high light emission output through the use of a simple method. <P>SOLUTION: When the semiconductor element obtained by forming functional layers on a buffer layer 202 is manufactured, the buffer layer 202, which is formed by growing epitaxial crystal including the hexagonal system 3-5 group nitride semiconductor, so as to allow a crystal main surface constituting the semiconductor element to be ä0001}, is divided into the plurality of buffer layers with the use of an isolation groove 221 along an axis where an angle Y degrees made with the axis of [11-20] equals 15+30X (X is an integer from 0 to 5). The epitaxial crystal including the hexagonal system 3-5 group nitride semiconductor is grown on each of the plurality of buffer layers, so as to form the functional layers. Thus, the crystal surface of a side surface constituting the semiconductor element is processed to be a coarse surface. <P>COPYRIGHT: (C)2009,JPO&INPIT |
