| 摘要 |
PROBLEM TO BE SOLVED: To allow an impurity layer composing a PN diode of a JBS to come into ohmic contact with a Schottky electrode. SOLUTION: The Schottky electrode 4 is composed of a plurality of electrode materials, and a lower-layer electrode 4a comes into ohmic contact with each p type layer 8 while an upper-layer electrode 4b is in Schottky contact with an n<SP>-</SP>type drift layer 2, thus improving respective characteristics effectively as the JBS having the characteristics of both of the Schottky and PN diodes. COPYRIGHT: (C)2009,JPO&INPIT |
