| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser array capable of controlling the clearance of an air gap with high accuracy and having high reliability. SOLUTION: Two mesas M1 and M2 are formed on a substrate 10. Wavelength tuning layers 20 are internally formed in the mesas M1 and M2. In a part in the mesa M2 among the wavelength tuning layers 20, an air gap 20A is formed at least at a region opposed to a current injection region 12A. The air gap 20A is connected to a hole 21 having a depth reaching the air gap 20A from the upper surface of the mesa M2, and formed by etching via the hole 21. COPYRIGHT: (C)2009,JPO&INPIT
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