| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor device, having small deterioration in the device characteristics, caused by an etching damage and small variation in device characteristics caused by variation in etching. SOLUTION: The manufacturing method of a nitride semiconductor device has a step, in which a first nitride semiconductor layer 17 and a second nitride semiconductor layer 18 having a Fermi level larger than that of the first nitride semiconductor layer 17, as well as, containing an n-type impurity are formed on a substrate 11 sequentially from the substrate 11 side. In addition, the manufacturing method has a step, in which the second nitride semiconductor layer 18 is etched so that the etching is automatically stopped, in a state where the second nitride semiconductor layer 18 remains, by making the second nitride semiconductor layer 18 react with an alkali etchant, while irradiating the second nitride semiconductor layer 18 with a light. COPYRIGHT: (C)2009,JPO&INPIT
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