METHOD OF FORMING A DIELECTRIC CAP LAYER FOR A COPPER METALLIZATION BY USING A HYDROGEN BASED THERMAL-CHEMICAL TREATMENT

摘要

A new technique is disclosed in which a barrier/cap layer for a copper based metal line is formed by using a thermal-chemical treatment based on hydrogen with a surface modification on the basis of a silicon-containing precursor followed by an in situ plasma based deposition of silicon based dielectric barrier material. The thermal-chemical cleaning process is performed in the absence of any plasma ambient.