发明名称 |
Method for producing a semiconductor component and a semiconductor component produced according to the method |
摘要 |
A method for producing a semiconductor component includes forming an n-doped layer in a p-doped layer of the semiconductor component, wherein the n-doped layer comprises at least one of: a sieve-like layer or a network-like layer. The method also includes porously etching the p-doped layer between the material of the n-doped layer to form a top electrode, and forming a cavity below the n-doped layer. |
申请公布号 |
US2008286970(A1) |
申请公布日期 |
2008.11.20 |
申请号 |
US20080152241 |
申请日期 |
2008.05.12 |
申请人 |
|
发明人 |
BENZEL HUBERT;WEBER HERIBERT;ARTMANN HANS;SCHAEFER FRANK |
分类号 |
G01L9/00;H01L21/306;B81B3/00;B81C1/00;H01L29/84 |
主分类号 |
G01L9/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|