发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PROCESS FOR MANUFACTURING THE SAME |
摘要 |
A semiconductor IC includes grooves formed in a substrate to define a first dummy region and second dummy regions formed at a scribing area, and third dummy regions and a fourth dummy region formed at a product area. A width of the first dummy region is greater than widths of each of the second and third dummy regions and a width of the fourth dummy region is greater than widths of each of the third dummy regions. A conductor pattern is formed over the first dummy region for optical pattern recognition. The first dummy region is formed under the conductor pattern so the grooves are not formed under the conductor pattern. The second dummy regions are spaced from one another by a predetermined spacing at the scribing area, and the third dummy regions are spaced from one another by a predetermined spacing at the product area. |
申请公布号 |
US2008283970(A1) |
申请公布日期 |
2008.11.20 |
申请号 |
US20070948626 |
申请日期 |
2007.11.30 |
申请人 |
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发明人 |
UCHIYAMA HIROYUKI;CHAKIHARA HIRAKU;ICHISE TERUHISA;KAMINAGA MICHIMOTO |
分类号 |
H01L21/76;H01L23/544;H01L21/302;H01L21/304;H01L21/3105;H01L21/3205;H01L21/762;H01L21/768;H01L23/52 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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