| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide the data rewriting method of a non-volatile semiconductor memory device for improving deletion time by a hot carrier, and for suppressing the increase of manufacturing costs. <P>SOLUTION: In the non-volatile semiconductor memory device in which a rewritable non-volatile memory transistor having a control gate electrode and a floating gate electrode as a gate electrode is formed on a semiconductor substrate, the data rewriting method of the non-volatile semiconductor memory includes: injecting electrons put in a high energy state into the floating gate electrode to set a data writing state upon writing; and injecting a hot hole due to avalanche breakdown into a floating gate electrode to delete data upon deletion. After writing, at least deletion is partially performed in such a state that the temperature of a non-volatile memory transistor formation region in the semiconductor substrate is raised by heating more than that in the state prior to heating. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
