| 摘要 |
PROBLEM TO BE SOLVED: To provide an efficient layout relating to a storage device. SOLUTION: A storage device comprises: a plurality of word lines WL; a plurality of data lines DL that cross a plurality of word lines WL; and a plurality of memory cells MC each of which is disposed at each intersection of the plurality of word lines WL and the plurality of data lines DL and includes a storage element the resistance of which varies according to stored information, and a MOS transistor. The MOS transistor has a structure FL in which a current path between a source and a drain is diagonally formed for one of the corresponding data lines. The plurality of memory cells connected to selected ones of the plurality of word lines are selected. COPYRIGHT: (C)2009,JPO&INPIT |
