| 摘要 |
A lateral DMOS device having a structure that prevents breakdown of a semiconductor device while enhancing the breakdown voltage property. The lateral DMOS device can include a body diode region having a second conduction type well region formed in a first conduction type semiconductor substrate, the second conduction type well region including a first conduction type body region and a drain region each formed in the second conduction type well region, a first conduction type impurity region formed in the first conduction type body region, a source region formed in the first conduction type body region, and a gate insulating film and a gate electrode formed on the first conduction type semiconductor substrate, wherein the first conduction type body region and the second conduction type well region compose a body diode; and a protective diode region in which the first conduction type impurity region is formed at a prescribed interval, wherein the first conduction type body region and the second conduction type well region compose a protective diode.
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