| 摘要 |
Contact holes (openings) ( 17 ) are created in the upper electrode ( 14 ) and the dielectric film ( 15 ) of a polysilicon-insulator-polysilicon (PIP) capacitive element to form a plurality of evaluation patterns wherein the lower electrode ( 13 ) and upper layer wiring lines ( 20 ) for measurement are electrically connected through contacts ( 16 ). At least four evaluation patterns are created by a combination of two or more values of a distance L with different values of a width W. Since it can be assumed that a difference in the resistance value between the respective evaluation patterns is only due to the effect of a change in a rectangular region (W*L) between the contact holes (openings) ( 17 ), it is possible to easily calculate the sheet resistance of the high-resistance portion from a change in the resistance value of each of the measurement patterns.
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