发明名称 COATING MATERIAL FOR PHOTORESIST PATTERN AND METHOD OF FORMING FINE PATTERN USING THE SAME
摘要 A coating material for a photoresist pattern includes a water-soluble polymer and an additive mixed with the water-soluble polymer. The additive may be at least one selected from the group represented by Formulas 1 and 2: wherein X and Y respectively represent one selected from a heteroatom group consisting of N, O and S, and R<SUB>1 </SUB>to R<SUB>8 </SUB>respectively represent one selected from an electron donating group consisting of an alkyl group and -H, and wherein X and Y respectively represent one selected from a heteroatom group consisting of N, O and S, and R<SUB>1 </SUB>to R<SUB>7 </SUB>respectively represent one selected from an electron donating group consisting of an alkyl group and -H.
申请公布号 US2008286684(A1) 申请公布日期 2008.11.20
申请号 US20080110864 申请日期 2008.04.28
申请人 OH JOON-SEOK;KIM JU-YOUNG 发明人 OH JOON-SEOK;KIM JU-YOUNG
分类号 G03F7/20;G03F7/004 主分类号 G03F7/20
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