| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation method for hard mask pattern of semiconductor element by which a mask having a pitch equal to or less than resolving power of an exposure equipment can be formed. SOLUTION: A first hard mask pattern 103 is formed by using a photo resist pattern using an exposure process at a formation process for a hard mask pattern of a semiconductor element. A separation film 104 is formed on an entire structure including the first hard mask pattern. Then a second hard mask pattern is formed in a space between the first hard mask patterns, and the exposed separation film is removed by etching. Thereby the mask having a pitch equal to or less than resolving power of the exposure equipment is formed. COPYRIGHT: (C)2009,JPO&INPIT
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