| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which can suppress process variation in etching. SOLUTION: A thin film GT is formed on a substrate SB. A resist layer RS is formed on the thin film GT. An intermediate layer IL is formed on the resist layer RS. A photoresist pattern PR is formed on the intermediate layer IL. By using the photoresist pattern PR as a mask. the intermediate layer IL is patterned. The patterned intermediate layer IL is used as a mask to pattern the resist layer RS. By using any one of the patterned intermediate layer IL and the patterned resist layer RS as a mask, the thin film GT is etched. A mask material to be used for etching the thin film GT is not changed from start to end of etching of the thin film GT. COPYRIGHT: (C)2009,JPO&INPIT |
